Growth of ultrahigh-density quantum-confined germanium dots on SiO 2 thin films

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Berbezier, I ^a   Karmous, A ^a   Ronda, A ^a   Sgarlata, A ^b   Balzarotti, A ^b   Castrucci, P ^b   Scarselli, M ^b   De Crescenzi, M ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; GERMANIUM; SCANNING TUNNELING MICROSCOPY; SILICA; THIN FILMS;

GE DROPLETS; NANOELECTRONICS; QUANTUM-CONFINED GERMANIUM DOTS; SIO2 THIN FILMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747091279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2221875     Document Type: Article

References (34)

1. M. Fukuda, Optical Semiconductor Devices (Wiley, New York, 1999).
2. Jan De Blauwe, IEEE Trans. Nanotechnol. 1, 72 (2002);
3. B. H. Koh, E. W. H. Kan, W. K. Chim, W. K. Choi, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. 97, 124305 (2005);
4. M. Kanoun, A. Souifi, T. Baron, and F. Mazen, Appl. Phys. Lett. 84, 5079 (2004).
5. P. Schnittenhelm, M. Gail, J. Brunner, J. F. Nutzel, and G. Abstreiter, Appl. Phys. Lett. 67, 1292 (1995).
6. O. Leifeld, E. Müller, D. Grützmacher, B. Müller, and K. Kern, Appl. Phys. Lett. 74, 994 (1999).
7. Y.-M. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).
8. V. A. Shchukin, N. N. Ledenstsov, and D. Binberg, Epitaxy of Nanostructures (Springer, Berlin, 2004), and references therein.
9. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. Stanley Williams, Science 279, 353 (1998).
10. B. Voigtlander, Surf. Sci. Rep. 43, 127 (2001).
11. I. Berbezier, A. Ronda, and A. Portavoce, J. Phys.: Condens. Matter 14, 8283 (2002).
12. P. D. Szkutnik, A. Sgarlata, S. Nufris, N. Motta, and A. Balzarotti, Phys. Rev. B 69, 201309 (2004).
13. F. Boscherini, G. Capellini, R. Di Gaspare, F. Rosei, N. Motta, and S. Mobilio, Appl. Phys. Lett. 76, 682 (2000).
14. A. Karmous, A. Cuenat, A. Ronda, I. Berbezier, S. Atha, and R. Hull, Appl. Phys. Lett. 85, 6401 (2004).
15. I. Berbezier, A. Ronda, A. Portavoce, and N. Motta, Appl. Phys. Lett. 83, 4833 (2003).
16. F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, S. Heun, P.-D. Szkutnik, A. Sgarlata, M. De Crescenzi, and N. Motta, Appl. Phys. Lett. 84, 4526 (2004).
17. Y. Wakayama, T. Tagami, and S. Tanaka, Thin Solid Films 350, 300 (1999).
18. I. Berbezier, A. Karmous, A. Ronda, T. Stoica, L. Vescan, G. Remco, A. Olzierski, E. Tsoi, and A. Nassiopoulou, J. Phys.: Conf. Ser. 10, 73 (2005).
19. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Phys. Rev. B 62, 1540 (2000).
20. A. Barski, M. Derivaz, J. L. Rouvière, and D. Buttard, Appl. Phys. Lett. 77, 3541 (2000).
21. A. V. Kolobov, A. A. Shklyaev, H. Oyanagi, P. Fons, S. Yamasaki, and M. Ichikawa, Appl. Phys. Lett. 78, 2563 (2001).
22. A. A. Shklyaev and M. Ichikawa, Appl. Phys. Lett. 80, 1432 (2002).
23. T. Baron, B. Pelissier, L. Perniola, F. Mazen, J. M. Hartmann, and G. Rolland, Appl. Phys. Lett. 83, 1444 (2003).
24. A. Karmous, I. Berbezier, and A. Ronda, Phys. Rev. B 73, 075323 (2006).
25. A. Rastelli and H. von Kanel, Surf. Sci. 515, L493 (2002).
26. To make proper I- V measurements and to extract reliable values of energy gap one should stay in a density of state regime and one should select a suitable distance and therefore a proper balance between voltage and current. This can be done quite easily by inspecting the I- V curve that should not resemble that of a Schottky junction because in this case the flowing of the current masks the genuine density of states. For more details see, e.g., Scanning Tunneling Microscopy, Methods of Experimental Physics, Vol. 27, edited by J. A. Stroscio and W. J. Kaiser (Academic, San Diego, 1993).
27. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992).
28. F. A. Reboredo and A. Zunger, Phys. Rev. B 62, R2275 (2000).
29. Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 77, 1182 (2000).
30. C. S. Garoufalis, M. S. Skaperda, and A. D. Zdetsis, J. Phys.: Conf. Ser. 10, 97 (2005).
31. Y. Nakamura, K. Watanabe, Y. Fukuzawa, and M. Ichikawa, Appl. Phys. Lett. 87, 133119 (2005).
32. Y. Maeda, Phys. Rev. B 51, 1658 (1995).
33. H.-Ch. Weissker, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 65, 155328 (2002).
34. 2Si(001) clean surface obtained after a rapid thermal annealing at 950 °C; the lower panel exhibits a typical line profile of the STM image shown in the top panel. This document can be reached via a direct link in the online article's HTML reference section or via the EPAPS homepage (http://www.aip.org/pubservs/epaps.html).