Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 106-111

  Legrand, B ^a   Agache, V ^a   Melin T ^a   Nys, J P ^a   Senez, V ^a   Stievenard D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AFM TIP; CHEMICAL EVOLUTION; EX-SITU ATOMIC FORCE MICROSCOPY; FORMATION TEMPERATURE; IN-SITU; ISLAND FORMATION; ISLAND SIZE DISTRIBUTION; NANOMETER SIZE; NATIVE OXIDES; PRELIMINARY DATA; SELF FORMATION; SILICON DOTS; SILICON ISLANDS; SILICON LAYER; SILICON-ON-INSULATOR SUBSTRATES; SOI SUBSTRATES; THERMAL-ANNEALING; ULTRA-HIGH VACUUM CHAMBER;

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY;

HEAT TREATMENT;

EID: 0036139202     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1420761     Document Type: Article

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