Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Gacem, K ^a   El Hdiy, A ^a   Troyon, M ^a   Berbezier, I ^b   Szkutnik, P D ^b   Karmous, A ^b   Ronda, A ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COULOMB BLOCKADE; ELECTRON INJECTION; GERMANIUM; SILICA; THERMAL EFFECTS;

CARRIER EXCHANGE; GERMANIUM NANOCRYSTALS; ROOM TEMPERATURE;

NANOCRYSTALS;

EID: 36249010775     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2804013     Document Type: Article

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