Charge storage in nitrided nanocrystalline silicon dots

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Huang, Shaoyun ^a   Oda, Shunri ^a  

^a SORST JST ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING SILICON;

DEFECT STATES; MEMORY NODES; SILICON QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28344432005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2115069     Document Type: Article

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