Charge storage in nitrided nanocrystalline silicon dots

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Huang, Shaoyun ^a   Oda, Shunri ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING SILICON;

DEFECT STATES; MEMORY NODES; SILICON QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28344432005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2115069     Document Type: Article

References (11)

1. S. Banerjee, S. Huang, T. Yamanaka, and S. Oda, J. Vac. Sci. Technol. B 20, 1135 (2002).
2. K. K. Likharev, Appl. Phys. Lett. 73, 2137 (1998).
3. R. Ohba, N. Sugiyama, K. Uchida, J. Koga, and A. Toriumi, IEEE Trans. Electron Devices 49, 1392 (2002).
4. R. F. Steimle, M. Sadd, R. Muralidhar, R. Rao, B. Hradsky, S. Straub, and B. E. White, IEEE Trans. Nanotechnol. 2, 335 (2003).
5. S. Huang, K. Arai, K. Usami, and S. Oda, IEEE Trans. Nanotechnol. 3, 210 (2004).
6. Y. Majima, Y. Oyama, and M. Iwamoto, Phys. Rev. B 62, 1971 (2000).
7. K. Yano, T. Ishii, T. Sano, and T. Mine, Proc. IEEE 87, 633 (1999).
8. K. Kushida-Abdelghafar, K. Watanabe, T. Kikawa, Y. Kamigaki, and J. Ushio, J. Appl. Phys. 92, 2475 (2002).
9. S. Huang, S. Banerjee, R. T. Tung, and S. Oda, J. Appl. Phys. 94, 7261 (2003).
10. E. Lusky, Y. Shacham-Diamand, A. Shappir, I. Bloom, and B. Eitan, Appl. Phys. Lett. 85, 669 (2004).
11. M. Khoury, M. J. Rack, A. Gunther, and D. K. Ferry, Appl. Phys. Lett. 74, 1576 (1999).