Some insights into the relaxation mechanisms of germanium growing on (001) Si by ultrahigh vacuum chemical vapor deposition

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 569-583

  Bouchier, D ^a   Yam, V ^a   Halbwax, M ^a   Nguyen, L H ^a   Debarre D ^a   Fossard, F ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS; SILICON; VACUUM APPLICATIONS;

CRITICAL THICKNESS; DEPOSITION TEMPERATURE; PLASTIC RELAXATION; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

GERMANIUM;

EID: 33846965550     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355854     Document Type: Conference Paper

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