Body effect induced wear-out acceleration in ultra-thin oxides

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1031-1034

  Bruyere S ^a   Roy, D ^a   Robilliart, E ^a   Vincent, E ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; DEGRADATION; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; OXIDES; POLARIZATION;

STRESS-INDUCED LEAKAGE CURRENTS (SILC); ULTRATHIN OXIDES;

MOSFET DEVICES;

EID: 0035394886     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00065-8     Document Type: Article

References (12)