Invited Paper Anode hole generation mechanisms

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1347-1354

  Ghetti, A ^a   Alam, M ^b   Bude, J ^b  

^a STMICROELECTRONICS   (Italy)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; COMPUTER SIMULATION; DEGRADATION; IMPACT IONIZATION;

ANODE HOLE GENERATION;

HOLE MOBILITY;

EID: 0035456912     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00139-1     Document Type: Article

References (8)

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2. Alam M, Weir B, Bude J, Silverman P, Ghetti A. A Computational Model for Oxide Breakdown: Theory and Experiments. To be published in Microelectronic Engineering.
3. 2. IEEE Elec. Dev. Letters 1986;7(3):164.
4. 2 Breakdown Model for Very Low Voltage Lifetime Extrapolation. IEEE Trans. Electron Dev. 1994;41(5):761.
5. Bude J. Weir B, Silverman P. Explanation of Stress-Induced Damage in Thin Oxides. In: Proc. Int. Elec. Dev. Meeting 1998, p. 179.
6. Chen IC, Holland S, Young KK, Chang C, Hu C. Substrate hole current and oxide breakdown. Appl. Phys. Letters 1986;49(11):669.
7. Chen I-C, Holland SE, Hu C. Oxide breakdown dependence on thickness and hole current-enhanced reliability of ultra-thin oxides. In: Proc. Int. Elec. Dev. Meeting 1986, p. 660.
8. Rasras M, De Wolf I, Groeseneken G, Kaczer B, Degraeve R, Maes HE. Photo-Carrier Generation as the Origin of Fowler-Nordheim-Induced Substrate Hole Current in Thin Oxides. IEEE Trans. Electron Dev. 2001;48(2):231.