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Volumn 85, Issue 3, 2008, Pages 500-507

Isotropic etch for SiO2 microcantilever release with ICP system

Author keywords

Dry isotropic etching; Release process and ICP isotropic etch; SiO2 microcantilever

Indexed keywords

ANISOTROPIC ETCHING; DRY ETCHING; PLASMA SOURCES;

EID: 38949172099     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.09.004     Document Type: Article
Times cited : (18)

References (29)
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    • Fritz J., et al. Science 288 (2000) 316-318
    • (2000) Science , vol.288 , pp. 316-318
    • Fritz, J.1
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    • .
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  • 20
    • 38949101040 scopus 로고    scopus 로고
    • F. Laermer, A. Schilp, Method of Anisotropically Etching Silicon, US Patent (1996) 5501893.
    • F. Laermer, A. Schilp, Method of Anisotropically Etching Silicon, US Patent (1996) 5501893.
  • 21
    • 0032636883 scopus 로고    scopus 로고
    • F. Laermer, A. Schilp, K. Funk, M. Offenberg, Bosch Deep Silicon Etching: Improving Uniformity and Etch Rate for Advanced Mems Applications, Technical Digest MEMS'99, Florida, USA, 1999, pp. 211-216.
    • F. Laermer, A. Schilp, K. Funk, M. Offenberg, Bosch Deep Silicon Etching: Improving Uniformity and Etch Rate for Advanced Mems Applications, Technical Digest MEMS'99, Florida, USA, 1999, pp. 211-216.
  • 26
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    • S. Frederico, C. Hibert, Silicon Sacrificial Layer Dry Etching (SSLDE) for Free-standing RF MEMS Architectures, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2003, pp. 570-573.
    • S. Frederico, C. Hibert, Silicon Sacrificial Layer Dry Etching (SSLDE) for Free-standing RF MEMS Architectures, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS), 2003, pp. 570-573.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.