Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Law, J J M ^a   Yu, E T ^a   Haskell, B A ^b,c   Fini, P T ^b,c   Nakamura, S ^b   Speck, J S ^b   Denbaars, S P ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Inlustra Technologies LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LATERAL EPITAXIAL OVERGROWTH (LEO); NANOSCALE ELECTRONIC STRUCTURES; PARTIAL DISLOCATION; SCANNING CAPACITANCE IMAGE CONTRASTS; SCANNING CAPACITANCE MICROSCOPY;

CAPACITANCE; CATHODOLUMINESCENCE; FEATURE EXTRACTION; GALLIUM COMPOUNDS; NITROGEN COMPOUNDS; POSITRONS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC STRUCTURE;

EID: 38149095003     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828161     Document Type: Article

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