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Volumn 19, Issue 4, 2001, Pages 1671-1674

Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; ELECTROSTATICS; FIELD EFFECT SEMICONDUCTOR DEVICES; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

EID: 0035535375     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1385914     Document Type: Conference Paper
Times cited : (9)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.