Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2441-2444

  Cho, M S ^a   Sawazaki, N ^a   Sugita, K ^a   Hashimoto, A ^a   Yamamoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC PROPERTIES; EXPERIMENTAL STUDIES; INN FILMS; NITRIDE SEMICONDUCTORS;

CRYSTALS; ELECTRIC CONDUCTIVITY; NITRIDES; OPTICAL DESIGN; SEMICONDUCTOR MATERIALS;

MOLECULAR BEAM EPITAXY;

EID: 49749152760     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674845     Document Type: Conference Paper

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