Computer simulation for morphology, size, and density of oxide precipitates in CZ silicon

Journal of the Electrochemical Society

Volumn 150, Issue 8, 2003, Pages

  Sueoka, Koji ^a   Akatsuka, Masanori ^a   Okui, Masahiko ^a   Katahama, Hisashi ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH; FREE ENERGY; MORPHOLOGY; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); STACKING FAULTS;

CRYSTAL-ORIGINATED PARTICLES; GROWN-IN DEFECTS; ISOTHERMAL ANNEALING; RESIDUAL POINT DEFECT CONCENTRATIONS;

SILICON;

EID: 0041699889     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1588301     Document Type: Article

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