Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 363-370

  Takahashi, Jun ^a   Nakai, Katsuhiko ^a   Kawakami, Kazuto ^a   Inoue, Yoshiharu ^a   Yokota, Hideki ^a   Tachikawa, Akiyoshi ^a   Ikari, Atsushi ^a   Ohashi, Wataru ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Carbon doping; Crystal growth; Czochralski silicon; Grown in defect; Nitrogen doping; Transmission electron microscopy; Vacancy; Void

Indexed keywords

CARBON; CRYSTAL GROWTH FROM MELT; DEFECTS; DOPING (ADDITIVES); MORPHOLOGY; NITROGEN; TRANSMISSION ELECTRON MICROSCOPY;

COOLING RATE; MICROVOID DEFECTS;

SEMICONDUCTING SILICON;

EID: 0038642166     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.363     Document Type: Article

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