Transient computer simulation of a CZ crystal growth process

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 452-457

  Dornberger, E ^a   Von Ammon, W ^a   Van Den Bogaert, N ^b   Dupret, F ^b  

^a SILTRONIC AG   (Germany)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; HEAT TRANSFER; INDUSTRIAL FURNACES; OXIDATION; PHASE INTERFACES; SILICON; STACKING FAULTS; THERMAL EFFECTS; THERMAL GRADIENTS;

BULK GROWTH PROCESSES; CRITICAL PULL RATE; CRUCIBLE TEMPERATURE; CRYSTAL DIAMETER; HEATER POWER; OXIDATION INDUCED STACKING FAULT (OSF) RING; SOLID/LIQUID INTERFACE; WAFER CENTER;

CRYSTAL GROWTH FROM MELT;

EID: 0030230862     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00068-1     Document Type: Article

References (20)

1. F. Dupret, P. Nicodeme, Y. Ryckmans, P. Wouters and M.J. Crochet, Int. J. Heat Mass Transfer 33 (1990) 1849.
2. F. Dupret and N. Van den Bogaert, in: Handbook of Crystal Growth, Vol. 2b, Modeling Bridgman and Czochralski Growth, Ed. D.T.J. Hurle (North-Holland, Amsterdam, 1994) ch. 15.
3. N. Van den Bogaert and F. Dupret, Proc. IMA Conf. Math. Mod. Mat. Proc., Bristol, UK, September 1991, Eds. M. Cross, J.F.-T. Pittman and R.D. Wood (Clarendon, Oxford, 1993) pp. 493-515.
4. N. Van den Bogaert and F. Dupret, J. Crystal Growth, submitted.
5. W. Wijaranakula, J. Electrochem. Soc. 139 (1992) 604.
6. H. Tachimori, T. Sakon and T. Kaneko, 7th Keitusho Kohgaku Symp. of Jpn. Soc. Appl. Phys., ISAP Catalogue No. AP 902217 (1990).
7. M. Hourai, M. Sano, S. Sumita and T. Shigematsu, Proc. of Progress in Semiconductor Fabrication, Technical Conference at SEMICON Europe 1993, SEMI Europe, Brussels (1993).
8. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama, Semicond. Sci. Technol. 7 (1992) A135.
9. M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito, Defect Control in Semiconductors, Ed. K. Sumino (Elsevier, Amsterdam, 1990) p. 157.
10. W. von Ammon, A. Ehlert, U. Lambert, D. Graef, M. Brohl and P. Wagner, Proc. 7th Int. Symp. on Silicon Materials Science and Technology, Eds. H.R. Huff, W. Bergholz and K. Sumino, 94-10 (Electrochemical Society, New York, 1994) p. 136.
11. W. von Ammon, E. Dornberger, H. Oelkrug and H. Weidner, J. Crystal Growth 151 (1995) 273.
12. R. Habu, I. Yunoke, T. Saito and A. Tomuira, Jpn. J. Appl. Phys. 32 (1993) 1740.
13. R. Winkler and M. Sano, J. Electrochem. Soc. 141 (1994) 1398.
14. K. Yamashita, K. Kitagawa, T. Aoki, E. Katjita, N. Fujino and T. Shiraiwa, Jpn. J. Appl. Phys. 30 (1991) 3465.
15. A. Seidl, PhD Thesis, Universität Erlangen-Nürnberg (1995).
16. A. Bejan, Convection Heat Transfer (Wiley, New York, 1984).
17. J.V. Beck, B. Blackwell and Ch.R. Saint-Clair, Inverse Heat Conduction Problems (Wiley-Interscience, New York, 1985).
18. Applied for world wide patent protection based on the German priority establishing patent application of April 28th 1994 under the serial number P 4414947.6.
19. V.V. Voronkov, J. Crystal Growth 59 (1982) 625.
20. T.Y. Tan and U. Goesele, Appl. Phys. A 37 (1985) 1.