A statistical model for extracting geometric sources of transistor performance variation

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 36-41

  Ma, Sean T ^a   Keshavarzi, Ali ^b   De, Vivek ^b   Brews, John R ^a  

^a University of Arizona   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Device variations; Global and local variations; Macroscopic and microscopic variations; Parametric mismatch and fluctuations; Random dopant fluctuations; Threshold voltage variations; Within die or intra die variations

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MICROSCOPIC EXAMINATION; STATISTICAL METHODS;

DEVICE VARIATIONS; THRESHOLD VOLTAGE VARIATIONS;

TRANSISTORS;

EID: 0742304015     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820648     Document Type: Article

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