Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1235-1238

  Yang, B ^a   Brandt, O ^a   Zhang, Y G ^b   Li, A Z ^b   Jenichen, B ^a   Paris, G ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Direct Epitaxy of GaN SiC; MBE; Photoluminescence; Reflectance

Indexed keywords

ELECTRON TRANSITIONS; EXCITONS; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; SPECTROSCOPY; SURFACE TREATMENT; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; REFLECTANCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031652184     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1235     Document Type: Article

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