Vapor-phase epitaxy of InxGa1 - xN using chloride sources

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 37-41

  Takahashi, Naoyuki ^a   Matsumoto, Ryu ^a   Koukitu, Akinori ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

GaCl3; Growth kinetics; In rich InxGa1 xN; InCl3; InGaN; Vapor solid distribution

Indexed keywords

NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

VAPOR SOLID DISTRIBUTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032094263     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00152-3     Document Type: Article

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