Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 327, Issue 1, 2004, Pages 78-82

  Lu, Dianqing ^a   Zhang, Rong ^a   Yu, Huiqiang ^a   Xiu, Xiangqian ^a   Li, Xuefei ^a   Gu, Shulin ^a   Shen, Bo ^a   Shi, Yi ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

68.37.Ps; 68.55.Jk; 81.05.Ea; 81.15.Kk

Indexed keywords

DYNAMICS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; SAPPHIRE; STOCHASTIC SYSTEMS;

68.37.PS; 68.55.JK; 81.05.EA; 81.15.KK; GALLIUM NITRIDES (GAN); NUMERICAL CORRELATIONS; ROUGHNESS EXPONENT; SAPPHIRE SUBSTRATES;

THIN FILMS;

GALLIUM NITRATE;

ARTICLE; ATOMIC FORCE MICROSCOPY; COATED PARTICLE; CORRELATION ANALYSIS; DIFFUSION; FILM COATING; MATERIAL COATING; MOLECULAR DYNAMICS; POROSITY; STOCHASTIC MODEL; SURFACE PROPERTY;

EID: 2942557038     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.04.076     Document Type: Article

References (18)

1. Paskove T., et al. J. Cryst. Growth. 208:2000;18
2. Feng Z.C., Yang T.R., Hou Y.T. Mater. Sci. Semicond. Processing. 4:2001;571
3. Tanaka H., Nakadaira A. J. Cryst. Growth. 221:2000;271
4. Nakamura S. Jpn. J. Appl. Phys. 30:1991;1620
5. Gu S.L., et al. J. Cryst. Growth. 231:2001;342
6. Cadoret R. J. Cryst. Growth. 205:1999;123
7. Vicsek T. Fractal Growth Phenomena. 1989;World Scientific, Singapore
8. Michely T., Krug J. Islands, Mounds and Atoms. 2004;Springer, Berlin
9. Krim J., Palasantzas G. Int. J. Mod. Phys. B. 9:1995;599
10. Morkoc H. Mater. Sci. Eng. R. 33:2001;135
11. Family F., Vicsek T. J. Phys. A. 18:1985;L75
12. Chiarello R., et al. Phys. Rev. Lett. 67:1991;3408
13. Drotar J.T., et al. Phys. Rev. E. 59:1999;177
14. Sinha S.K., et al. Phys. Rev. B. 38:1988;2297
15. Kardar M. Physica B. 221:1996;60
16. Family F. J. Phys. A. 19:1986;L441
17. Dobrescu G., Rusu M. Adv. Colloid Interface Sci. 95:2002;83
18. Medina E., et al. Phys. Rev. A. 39:1989;3053