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Applied Physics A: Materials Science and Processing

Volumn 90, Issue 2, 2008, Pages 379-384

An investigation into ultra-thin pseudobinary oxide (TiO2) x(Al2O3)1-x films as high-k gate dielectrics

(6) Shi, Lei a Yin, Jiang a Yin, Kuibo a Gao, Feng a Xia, Yidong a Liu, Zhiguo a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PERMITTIVITY; PULSED LASER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL LAYER; PSEUDOBINARY OXIDE; SUBSTRATE TEMPERATURE;

OXIDE FILMS;

EID: 36749001530 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-4290-4 Document Type: Article

Times cited : (15)

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