Microfocus x-ray study of selective area epitaxy of SiGe on Si

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 259-264

  Giannakopoulos, K P ^a,c   Roth, S ^b   Burghammer, M ^b   Fellous, C ^a   Richard, D ^b   Dutartre, D ^a  

^a STMICROELECTRONICS   (France)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; POLYCRYSTALLINE MATERIALS; SILICON WAFERS; STRAIN; STRUCTURE (COMPOSITION); X RAY DIFFRACTION ANALYSIS;

MICROGONIOMETERS;

EPITAXIAL GROWTH;

EID: 0037249154     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527214     Document Type: Article

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