Quantitative SIMS analysis of SiGe composition with low energy O 2 + beams

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7262-7264

  Jiang, Z X ^a   Kim, K ^a   Lerma, J ^a   Corbett, A ^a   Sieloff, D ^a   Kottke, M ^a   Gregory, R ^a   Schauer, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

AES; Composition; RBS; SiGe; SIMS; SOI

Indexed keywords

DATA REDUCTION; LIGHT EMISSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

AES; NORMAL INCIDENCE; SIGE;

SECONDARY ION MASS SPECTROMETRY;

EID: 33747183368     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.175     Document Type: Article

References (4)

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