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Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 180-183

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

(7) Hallstedt J a Isheden, C a Ostling M a Baubinas, R b Matukas, J b Palenskis, V b Radamson, H H a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b VILNIUS UNIVERSITY (Lithuania)

Author keywords

Arsenic; Boron; CVD; Epitaxy; HCl etching; Phosphorous; SiGe layers

Indexed keywords

ARSENIC; BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; OPTIMIZATION; PARAMETER ESTIMATION; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS;

HCL ETCHING; PATTERNED SUBSTRATES; SELECTIVITY MODE; SIGE LAYERS;

SILICON COMPOUNDS;

EID: 10644240786 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.052 Document Type: Conference Paper

Times cited : (8)

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