Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Chopra, Saurabh ^a   Ozturk, Mehmet C ^a   Misra, Veena ^a   McGuire, Kris ^b   McNeil, Laurie E ^b  

^a North Carolina State University   (United States)

^b University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL COMPRESSIVE STRAIN; BORON DOPING; STRAIN COMPENSATION; STRAIN ENERGY;

BORON; COMPRESSIVE STRENGTH; ELECTRIC CONDUCTIVITY; INTERFACIAL ENERGY; RAMAN SPECTROSCOPY;

SILICON ALLOYS;

EID: 33646892478     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2205752     Document Type: Article

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