Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 97-101

  Hallstedt J ^a   Parent, A ^a   Ostling M ^a   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Boron doping; Chemical vapor deposition; Epitaxy; SiGeC alloys

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN; X RAY DIFFRACTION ANALYSIS;

BORON DOPING; EPITAXIAL LAYERS; HALL SCATTERING; TRANSIENT-ENHANCED DIFFUSION (TED);

THIN FILMS;

EID: 13244255691     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.074     Document Type: Conference Paper

References (13)

1. E. Kasper, H. Kibbel, H.J. Herzog, and A. Gruhle Growth of 100 GHz SiGe-heterobipolar transistor (HBT) structures Jpn J Appl Phys 33 Part 1 1994 2415
2. K. Oda, E. Ohue, I. Suzumura, R. Hayami, A. Kodama, H. Shimamoto, and K. Washio Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax IEDM Tech Dig 15 2001 2
3. P.A. Stolk, D.J. Eaglesham, H.J. Gossmann, and J.M. Poate Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion Appl Phys Lett 66 1995 1370
4. H.J. Osten, M. Kim, G. Lippert, and P. Zaumseil Ternary SiGeC alloys growth and properties of a new semiconducting material Thin Solid Films 93 1997 294
5. C.L. Chang, A.St. Amour, and J.C. Sturm The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy (1 0 0) Si heterojunctions Appl Phys Lett 70 1997 1557
6. F. Fewster, and N.L. Andrew Determining the lattice relaxation in semiconductor layer systems by X-ray diffraction J Appl Phys 74 1993 3121
7. G.V. Hansson, H.H. Radamson, and W-X. Ni Strain and relaxation inSi-MBE structures studied by reciprocal space maping using high resolution X-ray diffraction J Mat Sci 6 1995 292
8. L.J. Van der Pauw A method of measuring specific resistivity and hall effect of discs of arbitrary shape Phil Tech Rev 20 1958 220
9. M.R. Sardela Jr, H.H. Radamson, J.O. Ekberg, J.E. Sundgren, and G.V. Hansson Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures J Cryst Growth 143 1994 184
10. J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara, and I.K. Obinson GexSi1-x/Si strained-layer superlattice grown by molecular beam epitaxy J Vac Sci Technol A2 1984 436
11. x and Ge layers by high-resolution transmission electron microscopy J Cryst Growth 157 1995 80
12. M. Sze Physics of semiconductor devices 1981 Wiley New York
13. x alloy Phys Rev B54 1996 11317