Behavior of copper removal by CMP and its correlation to deposit structure and impurity content

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Feng, Hsien Ping ^a,c   Lin, Jeng Yu ^a,c   Cheng, Ming Yung ^b   Wang, Yung Yun ^a   Wan, Chi Chao ^a,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSE-PACKED PLANES; DEFECT GENERATION; ELECTROPLATED COPPER FILMS; FACE-CENTERED CUBIC STRUCTURE;

CRYSTAL STRUCTURE; ELECTROPLATED PRODUCTS; IMPURITIES; POTENTIODYNAMIC POLARIZATION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

METALLIC FILMS;

EID: 36448941885     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2801394     Document Type: Article

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