Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 3796-3804

  Lee, Haebum ^a   Wong, S Simon ^a   Lopatin, Sergey D ^b  

^a Stanford University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COPPER; ELECTROPLATING; GRAIN GROWTH; INTERFACIAL ENERGY; RAPID THERMAL ANNEALING; TENSILE STRESS; TEXTURES;

SELF-ANNEALING;

THIN FILMS;

EID: 0037394443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555274     Document Type: Article

References (25)

1. B. M. Hogan, AESF Conference, SUR/FIN, 1984.
2. T. Ritrdorf, L. Graham, S. Jin, C. Mu, and D. Fraser, Proceedings of the IEEE International Interconnect Technology Conference, Piscataway, NJ, 1998, p. 166.
3. C. Cabral, Jr. et al., Proceedings of Advanced Metallization Conference, 1998, p. 81.
4. J. M. E. Harper, C. Cabral, P. C. Andricacos, L. Gignac, I. C. Noyon, K. P. Rodbell, and C. K. Hu, J. Appl. Phys. 86, 2516 (1999).
5. Q.-T. Jiang, M. E. Thomas, G. Bersuker, B. Foran, R. Mikkola, B. Carpenter, and J. Ormando, Mater. Res. Soc. Symp. Proc. 337, 209 (1999).
6. Q.-T. Jiang, R. Mikkola, and B. Carpenter, in Ref. 3, p. 177.
7. H. Lee, S. D. Lopatin, D. Kim, V. M. Dubin, and S. S. Wong, Proceedings of Advanced Metallization Conference, 1999, p. 63.
8. I. A. Tomov, D. S. Stoychev, and I. B. Vitanova, J. Appl. Electrochem. 15, 887 (1985).
9. C. Lingk and M. E. Gross, J. Appl. Phys. 84, 5547 (1998).
10. T. Ritzdorf, L. Chen, S. Jin, D. Fulton, and C. Dundas, Proceedings of the IEEE International Interconnect Technology Conference, Piscataway, NJ, 1999, p. 287.
11. K. Ueno, T. Ritzdorf, and S. Grace, J. Appl. Phys. 86, 4930 (1999).
12. S. Vaidya and A. K. Sinha, Thin Solid Films 75, 253 (1981).
13. D. B. Knorr, D. P. Tracy, and K. P. Rodbelll, Appl. Phys. Lett. 59, 324 (1991).
14. D. P. Tracy, D. B. Knorr, and K. P. Rodbell, J. Appl. Phys. 76, 2671 (1994).
15. E. M. Zielinski, R. P. Vinci, and J. C. Bravman, Mater. Res. Soc. Symp. Proc. 391, 103 (1995).
16. P. Chaudhari, J. Vac. Sci. Technol. 9, 520 (1972).
17. M. F. Doerner and W. D. Nix, CRC Crit. Rev. Solid State Mater. Sci. 14, 225 (1988).
18. W. W. Mullins, Acta Metall. 6, 414 (1958).
19. C. V. Thompson, Acta Metall. 36, 2929 (1988).
20. M. McLean and B. Gale, Philos. Mag. 20, 1033 (1969).
21. C. V. Thompson, Scr. Metall. Mater. 28, 167 (1993).
22. H. Lee, S. D. Lopatin, A. F. Marshall, and S. S. Wong, Proceedings of the IEEE International Interconnect Technology Conference, Piscataway, NJ, 2001, p. 236.
23. S. S. Wong et al., in Ref. 2, p. 107.
24. W. D. Nix, Metall. Trans. A 20, 2217 (1989).
25. D. P. Tracy and D. B. Knorr, J. Electron. Mater. 22, 611 (1993).