Effective masses and valence-band splittings in GaN and AlN

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 12, 1997, Pages 7363-7375

  Kim, Kwiseon ^a   Lambrecht, Walter R L ^a   Segall, Benjamin ^a   van Schilfgaarde, Mark ^b  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b SRI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001182488     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.7363     Document Type: Article

References (57)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys., Part 2 34, L797 (1995).
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, 34, L1332 (1995).
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and W. Sugimoto, Jpn. J. Appl. Phys., Part 2 35, L74 (1996).
4. See, e.g., Gallium Nitride and Related Materials, edited by R. D. Dupuis, F. Ponce, S. Nakamura, and J. A. Edmond, MRS Symposia Proceeding No. 395 (Materials Research Society, Pittsburgh, 1996).
5. S. Kamiyama, K. Ohnaka, M. Suzuki, and T. Uenoyama, Jpn. J. Appl. Phys., Part 2 34, L821 (1995).
6. W. W. Chow, A. Knorr, and S. W. Koch, Appl. Phys. Lett. 67, 754 (1995).
7. N. O. Lipari and M. Altarelli, Phys. Rev. B 15, 4883 (1977).
8. Solid State Commun. 32, 171 (1979).
9. M. Drechsler, B. K. Meyer, D. M. Hoffmann, D. Detchprohm, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 34, L1178 (1995).
10. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
11. W. Shan, T. J. Schmidt, X. H. Yang, S. J. Hwang, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995).
12. W. Shan, A. J. Fisher, J. J. Song, G. E. Bulman, H. S. Kong, M. T. Leonard, W. G. Perry, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 69, 740 (1996).
13. B. Gil, O. Briot, and R.-L. Aulombard, Phys. Rev. B 52, R17028 (1995).
14. B. A. Monemar, Phys. Rev. B 10, 676 (1974).
15. L. Eckey, L. Podlowskii, A. Göldner, A. Hoffmann, I. Broser, B. K. Meyer, D. Volm, T. Streibl, T. Detchprohm, H. Amano, and I. Akasaki, in Silicon Carbide and Related Materials 1995, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima, Institute of Physics Conference Series No. 142 (IOP, London 1996), p. 943.
16. N. V. Edwards, M. D. Bremser, T. W. Weeks, Jr., H. Liu, A. E. Wickenden, K. Doverspike, R. A. Stall, D. K. Gaskill, J. A. Freitas, R. F. Davis, and D. E. Aspnes, Gallium Nitride and Related Materials (Ref. 3).
17. N. V. Edwards, S. D. Yoo, M. D. Bremser, T. W. Weeks, Jr., O. H. Nam, H. Liu, R. A. Stall, M. N. Horton, N. R. Perkins, T. F. Kuech, and D. E. Aspnes, Appl. Phys. Lett. 70, 2001 (1997).
18. D. Volm, K. Oettinger, T. Streibl, D. Kovalev, N. Ben-Chorin, J. Diener, B. K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu, and T. Detchprom, Phys. Rev. B 53, 16 543 (1996).
19. B. Monemar, P. Bergman, H. Amano, and I. Akasaki (unpublished). See Ref. 11.
20. S. Chichibu, T. Azuhata, and T. Sota, H. Amano, and I. Akasaki, Appl. Phys. Lett. 70, 2085 (1997).
21. M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52, 8132 (1995).
22. J. A. Majewski, M. Städele, and P. Vogl, in III-V Nitrides, edited by T. Moustakas, B. Monemar, I. Akasaki, and F. Ponce, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997), p. 887.
23. J. A. Majewski, M. Städele, and P. Vogl, MRS Internet J. Nitride Semicond. Res. 1, 30 (1996).
24. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. A. Khan, and C. J. Sun, Appl. Phys. Lett. 68, 2784 (1996).
25. S.-H. Wei and A. Zunger, Appl. Phys. Lett. 69, 2719 (1996).
26. Yu. M. Sirenko, J.-B. Jeon, K. W. Kim, M. A. Littlejohn, and M. A. Stroscio, Phys. Rev. B 53, 1997 (1996).
27. S. L. Chuang and C. S. Chang, Phys. Rev. B 54, 2491 (1996).
28. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
29. W. Kohn and L. J. Sham, 140, A1133 (1965).
30. L. Hedin and B. I. Lundqvist, J. Phys. C 4, 2064 (1971).
31. M. Methfessel, Phys. Rev. B 38, 1537 (1988).
32. K. Kim, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 53, 16 310 (1996).
33. M. van Schilfgaarde, A. Sher, and A.-B. Chen, J. Cryst. Growth 178, 8 (1997).
34. D. Singh, Phys. Rev. B. 43, 6388 (1991).
35. H. Schulz and K. H. Thiemann, Solid State Commun. 23, 815 (1977).
36. A. F. Wright and J. S. Nelson, Phys. Rev. B 50, 2159 (1994).
37. 51, 7866 (1995).
38. C.-Y. Yeh, Z. W. Lu, S. Froyen, and A. Zunger, Phys. Rev. B 46, 10 086 (1992).
39. J. M. Luttinger, Phys. Rev. 102, 1030 (1956); J. M. Luttinger and W. Kohn 97, 869 (1955).
40. G. L. Bir and G. E. Pikus, Symmetry and Srain-Induced Effects in Semiconductors (Wiley, New York, 1974).
41. T. Bahder, Phys. Rev. B 41, 11 992 (1990).
42. W. R. L. Lambrecht, K. Kim, S. N. Rashkeev, and B. Segall, Gallium Nitride and Related Materials (Ref. 3), p. 455.
43. G. Ramírez-Flores, H. Navarro-Contreras, A. Lastras-Martínez, R. C. Powell, and J. E. Greene, Phys. Rev. B 50, 8433 (1994).
44. J. J. Hopfield, J. Phys. Chem. Solids 15, 97 (1960).
45. D. L. Camphausen, G. A. N. Connell, and W. Paul, Phys. Rev. Lett. 26, 184 (1971); note that this is a theory article in which no reference is given for the experimental value quoted.
46. P. Perlin, I. Gorczyca, S. Porowski, T. Suski, N. E. Christensen, and A. Polian, Jpn. J. Appl. Phys., Part 1 32, 334 (1993).
47. A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev. B 48, 11 810 (1993).
48. M. van Schilfgaarde and H. Rücker (unpublished).
49. A. S. Barker, Jr. and M. Ilegems, Phys. Rev. B 7, 743 (1973).
50. M. Fanciulli, T. Lei, and T. D. Moustakas, Phys. Rev. B 48, 15 144 (1993).
51. X. Zhu, M. S. Hybertsen, and S. G. Louie, in Atomic Scale Calculations of Structure in Materials, edited by M. S. Daw and M. A. Schlüter, MRS Symposia Proceedings No. 193 (Materials Research Society, Pittsburgh, 1990), p. 113.
52. M. Willatzen, M. Cardona, and N. E. Christensen, Phys. Rev. B 51, 13 150 (1996).
53. M. Cardona, N. E. Christensen, and G. Fasol, 38, 1806 (1988).
54. W. R. L. Lambrecht and B. Segall, Phys. Rev. B 52, R2249 (1995).
55. W. R. L. Lambrecht, B. Segall, S. Strite, G. Martin, A. Agarwal, H. Morkoç, and A. Rockett, Phys. Rev. B 50, 14 155 (1994).
56. F. Aryasetiawan and O. Gunnarsson, Phys. Rev. B 54, 17 564 (1996).
57. GW stands for the one-electron Green’s function (Formula presented) and screened Coulomb interaction (Formula presented) in L. Hedin and S. Lundqvist, Solid State Phys. 23, 1 (1969).