Crystal orientation effect on valence-subband structures in wurtzite-GaN strained quantum wells

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 A, 1996, Pages

  Ohtoshi, T ^a   Niwa, A ^a   Kuroda, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTAL ORIENTATION; MATRIX ALGEBRA; NITROGEN COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN;

WURTZITE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030409585     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1566     Document Type: Article

References (15)