Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezoelectric polarization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3478-3482

  Park, Seoung Hwan ^a  

^a Catholic University of Daegu   (South Korea)

Author keywords

AlGaN; GaN; Piezoelectric; Polarization; Quantum well; Spontaneous

Indexed keywords

CHARGE CARRIERS; CRYSTAL ORIENTATION; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; MATHEMATICAL MODELS; MATRIX ALGEBRA; NITRIDES; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; WURTZITE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034204769     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3478     Document Type: Article

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