Performance of SiC bipolar (PiN) and unipolar (SBD) power rectifiers in current-voltage-frequency parameter space

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1181-1184

  Morisette, D T ^a   Cooper, J A ^b  

^a OptoLynx Inc   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

PiN diodes; Schottky diodes; SiC

Indexed keywords

RECTIFYING CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONICS ENGINEERING;

CURRENT VOLTAGE; LOW-VOLTAGE APPLICATIONS; PIN DIODE; POWER RECTIFIERS; SCHOTTKY DIODES; SIC DIODES; SWITCHING FREQUENCIES;

ELECTRIC RECTIFIERS;

EID: 0036431874     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1181     Document Type: Conference Paper

References (3)

1. L. Rumyantsev and R. Singh, IEEE Trans, on Electron Devices, 46, 2188 (1999).
2. R. Singh and J. W. Palmour, “High Temperature Characteristics of 8.6 kV 4H-SiC PiN Diode”, Proc. High Temperature Electronics Conf., Albuquerque, NM, June 13 - 15, 2000.
3. H. M. McGlothlin, et al., “4 kV Silicon Carbide Schottky Diodes for High-Frequency Switching Applications,” IEEE Device Research Conf., Santa Barbara, CA, June 28 - 30, 1999.