Dual-work-function Ni-FUSI metal gate for CMOS technology

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 10, 2007, Pages 1532-1539

  Zhou, Huajie ^a   Xu, Qiuxia ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

FUSI; Metal gate; Silicide

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); LEAKAGE CURRENTS; POLYSILICON; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY; WORK FUNCTION;

FULL SILICIDATION; METAL GATE;

GATES (TRANSISTOR);

EID: 35948994125     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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