Investigation of NiSi and TiSi as CMOS Gate Materials

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 634-636

  Xuan, Peiqi ^a   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS; Field effect mobility; Gate tunneling current; Gate workfunction; Short channel effect; Silicide gate; Silicon on insulator (SOI)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; INTERFACES (MATERIALS); NICKEL COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TITANIUM COMPOUNDS;

SILICIDATION;

GATES (TRANSISTOR);

EID: 0141918436     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817371     Document Type: Article

References (13)

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