Work function tuning through dopant scanning and related effects in Ni fully silicided gate for sub-45nm nodes CMOS

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 87-90

  Aime D ^a,e   Froment, B ^a   Cacho, F ^a   Carron, V ^b   Descombes, S ^a   Morand, Y ^a   Emonet, N ^a   Wacquant, F ^a   Farjot, T ^b   Jullian, S ^c   Laviron, C ^b   Juhel, M ^a   Pantel, R ^a   Molins, R ^d   Delille, D ^a   Halimaoui, A ^a   Bensahel, D ^a   Souifi, A ^e  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (Netherlands)

^d CENTRE DES MATÉRIAUX   (France)

^e INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; NICKEL COMPOUNDS; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY; GERMANIUM COMPOUNDS; NICKEL; PILES; SILICIDES;

BACK END OF LINE (BEOL) THERMAL STRESS; FULLY SILICIDED (FUSI) GATES; POLYSILICON GATES; WORK FUNCTION TUNING; 45NM NODE; CO-IMPLANT; DOPED POLYSILICON; FULLY SILICIDED GATES; GATE WORKFUNCTION; PILE-UP EFFECT; SILICIDATION; TUNING RANGES;

GATES (TRANSISTOR); DOPING (ADDITIVES);

EID: 21644454675     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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