Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7562-7568

  Noborisaka, Jinichiro ^a   Sato, Takuya ^a   Motohisa, Junichi ^a   Hara, Shinjiro ^a   Tomioka, Katsuhiro ^a   Fukut, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

InGaAs; MOVPE; Nano FET; Nanowire; Selective area growth

Indexed keywords

CHARACTERIZATION; DRAIN CURRENT; ELECTRIC POTENTIAL; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON; TRANSCONDUCTANCE;

DRAIN CURRENT-VOLTAGE; GATE TRANSFER; METAL CONTACTS; SELECTIVE AREA GROWTH;

FIELD EFFECT TRANSISTORS;

EID: 35948929852     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7562     Document Type: Article

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