Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 620-624

  Inari, Masaru ^a   Takeda, Junichiro ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Hexagonal pillar array; InP; Selective area metal organic vapor phase epitaxy (SA MOVPE); Two dimensional photonic crystal (2DPC)

Indexed keywords

ENERGY GAP; ETCHING; HIGH TEMPERATURE APPLICATIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR STRUCTURE; PHOTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH;

HEXAGONAL PILLAR ARRAYS; SELECTIVE AREA METAL ORGANIC VAPOR PHASE EPITAXY (SA-MO-VPE); TWO DIMENSIONAL PHOTONIC CRYSTALS (2DPC);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 1642274980     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.091     Document Type: Conference Paper

References (5)

1. M. Akabori, J. Motohisa, T. Fukui, IEEE Conference Proceedings of the 27th International Symposium on Compound Semiconductors, Tokyo, Japan, 2001, p. 191.
2. Takeda J., Akabori M., Motohisa J., Fukui T. Appl. Surf. Sci. 190:2002;236.
3. Fukui T., Ando S., Tokura Y., Toriyama T. Appl. Phys. Lett. 58:1991;2018.
4. Ando S., Kobayashi N., Ando H. Jpn. J. Appl. Phys. 32:1993;L1293.
5. Hiruma K., Yazawa M., Katsuyama T., Haraguchi K., Koguchi M., Kakibayashi H. J. Appl. Phys. 77:1995;447.