High-quality Al2O3/Pr2O3/ Al2O3 MIM capacitors for RF applications

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1937-1939

  Wenger, Ch ^a   Lippert, G ^a   Sorge, R ^a   Schroeder, T ^a   Mane, A U ^a   Lupina, G ^a   Dabrowski, J ^a   Zaumseil, P ^a   Fan, X ^a   Oberbeck, L ^b   Schroeder, U ^b   Mussig H J ^a  

^a IHP   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Capacitor; High ; Metal insulator metal (MIM); Thin film devices; Voltage linearity

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT DENSITY; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; THIN FILM DEVICES;

CAPACITANCE DENSITY; DIELECTRIC LAYER SYSTEM; ELECTRICAL CHARACTERISTICS; RF DEVICE APPLICATIONS; VOLTAGE LINEARITY;

MIM DEVICES;

EID: 33746634398     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.877870     Document Type: Article

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