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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5284-5287

Electrical properties of HfO2 thin insulating film prepared by anodic oxidation

(6) Yanagisawa, Hideto a Kamijyo, Masahiro a Shinkai, Satoko a Sasaki, Katsutaka a Abe, Yoshio a Yamane, Misao a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

High permittivity; Low dielectric loss; Low leakage current; Schottky emission; Very thin Hf anodized capacitor

Indexed keywords

ANODIC OXIDATION; CAPACITORS; CURRENT DENSITY; DIELECTRIC LOSSES; ELECTRIC FIELDS; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION;

SCHOTTKY EMISSIONS;

THIN FILMS;

EID: 0036697478 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.5284 Document Type: Article

Times cited : (15)

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