Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2518-2522

  Ding, Shi Jin ^a   Huang, Yu Jian ^a   Li, Yanbo ^b   Zhang, D W ^a   Zhu, C ^c   Li, M F ^c  

^a FUDAN UNIVERSITY   (China)

^b HEBEI UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; INTEGRATING CIRCUITS; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; WIRELESS TELECOMMUNICATION SYSTEMS;

CAPACITANCE DENSITY; MIM CAPACITOR; SANDWICHED DIELECTRICS; SIGNAL INTEGRATION CIRCUIT;

MIM DEVICES;

EID: 33845263012     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2357746     Document Type: Article

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