Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Park, K ^a   Canonico, M ^b   Celler, G K ^c   Seacrist, M ^d   Chan, J ^e   Gelpey, J ^e   Holbert, K E ^a   Nakagawa, S ^f   Tajima, M ^f   Schroder, D K ^a  

^a Arizona State University   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Soitec USA   (United States)

^d MEMC Electronic Materials Inc   (United States)

^e Mattson Technology Canada   (Canada)

^f JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; HIGH TEMPERATURE APPLICATIONS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SILICON; THIN FILMS;

PSEUDO METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; STRAINED SILICON ON INSULATOR;

SILICON ON INSULATOR TECHNOLOGY;

EID: 35348822459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2787167     Document Type: Article

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