Relaxation of strained-SOI substrates by RTA process

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 90-91

  Yamasaki, Kosuke ^a   Kosemura, Daisuke ^a   Tanaka, Satoshi ^a   Ogura, Atsushi ^a   Chiba, Ichiro ^b   Shimidzu, Ryosuke ^b  

^a MEIJI UNIVERSITY   (Japan)

^b PHOTON Design Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RAMAN PEAKS; STRAIN RELAXATION; STRAINED-SI SUBSTRATES; WAVENUMBER;

DIFFUSION; HIGH RESOLUTION ELECTRON MICROSCOPY; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RELAXATION PROCESSES; SUBSTRATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33744748240     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563546     Document Type: Conference Paper

References (2)

1. S. Nakashima et al., Appl. Phys. Lett., 84, 2533 (2004).
2. A. Ogura et al., Extended Abstract of the 4th International Symposium on Advanced Science and Technology of Silicon Materials.