Photoluminescence study of an ultrathin strained silicon on insulator layer

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Munguia J ^a   Bremond, G ^a   De La Torre, J ^a   Bluet, J M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SHRINKAGE; SILICON;

BAND GAP SHRINKAGE; INSULATOR LAYERS; OPTICAL TRANSITIONS; SILICON BAND GAPS;

ELECTRIC INSULATING MATERIALS;

EID: 33846570998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432290     Document Type: Article

References (18)

1. F. Andrieu, C. Dupŕ, F. Rochette, O. Faynot, L. Tosti, C. Buj, E. Rouchouze, M. Casś, B. Ghyselen, I. Cayrefourcq, L. Bŕvard, F. Allain, J. C. Barb́, J. Cluzel, A. Vandooren, S. Denorme, T. Ernst, C. Fenouillet-B́ranger, C. Jahan, D. Lafond, H. Dansas, B. Previtali, J. P. Colonna, H. Grampeix, P. Gaud, C. Mazuŕ, and S. Deleonibus, Proc. Symp. VLSI Tech., 134 (2006).
2. C. Mazure and I. Cayrefourcq, IEEE, Int. SOI Conf. 1 (2005).
3. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walter, Y. Zhang, M. Steeb, and M. Leong, Tech. Dig. - Int. Electron Devices Meet. 2003, 49.
4. T. A. Langdo, M. T. Currie, Z.-Y. Cheng, J. G. Fiorenza, M. Erdtmann, G. Braithwaite, C. W. Leitz, C. J. Vineis, J. A. Carlin, A. Lochtefeld, M. T. Bulsara, I. Lauer, D. A. Antoniadis, and M. Somerville, Solid-State Electron. 48, 1257 (2004).
5. G. Bremond, A. Souifi, O. DeBarros, A. Benmansour, F. Ducroquet, P. Warren and D. Dutartre J. Electron. Mater. 25, 1023 (1996).
6. P. Boucaud, M. El Kurdi, and J. M. Hartmann, Appl. Phys. Lett. 85, 46 (2004).
7. D. Wang, H. Narashima, K. Matsumoto, and M. Nakamae, Appl. Phys. Lett. 87, 251928 (2005).
8. O. Marty, T. Nychyporuk, J. de la Torre, V. Lysenko, G. Bremond, and D. Barbier, Appl. Phys. Lett. 88, 101909 (2006).
9. J. M. Hartmann, Y. Bogumilowicz, P. Holliger, F. Laugier, R. Truche, G. Roland, M. N. Śḿria, V. Renard, E. Olshanetsky, O. Estibal, D. Kvon, J. C Portal, and L. Claverie, Semicond. Sci. Technol. 19, 311 (2004).
10. B. Ghyselen, J.-M. Hartmann, T. Ernst, C. Aulnette, B. Osternaud, Y. Bogumilowicz, A. Abbadie, P. Besson, O. Rayssac, A. Tiberj, N. Daval, I. Cayrefourq, F. Fournel, H. Moriceau, C. Di Nardo, F. Andrieu, V. Paillard, M. Cabie, L. Vincent, E. Snoeck, F. Cristiano, A. Rocher, A. Ponchet, A. Claverie, P. Boucaud, M.-N. Semeria, D. Bensahel, N. Kernevez, and C. Mazure, Solid-State Electron. 48, 1285 (2004).
11. G. E. Jellison, Jr. and F. A. Modine, J. Appl. Phys. 53, 3745 (1982).
12. P. J. Dean, J. R. Haynes, and W. F. Flood, Phys. Rev. 161, 711 (1967).
13. A. T. Blumenau, R. Jones, S. Öberg, P. R. Briddon, and T. Frauenheim, Phys. Rev. Lett. 87, 187404 (2001).
14. S. Richard, F. Aniel, G. Fishman, and N. Cavassilas, J. Appl. Phys. 94, 1795 (2003).
15. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997).
16. Martin M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
17. L. Yang, J. R. Watling, R. C. W. Wilkins, M. Bori̧i, J. R. Barker, A. Asenov, and S. Roy, Semicond. Sci. Technol. 19, 1174 (2004).
18. J. Munguía, H. Chouaib, J. de la Torre, G. Bremond, C. Bru-Chevallier, A. Sibai, B. Champagnon, M. Moreauand, and J.-M. Bluet, Nucl. Instrum. Methods Phys. Res. B 253, 18 (2006).