Study of the effect of thermal annealing on the optical and electrical properties of vacuum evaporated amorphous thin films in the system Ge20Te80-xBix

Semiconductor Science and Technology

Volumn 17, Issue 3, 2002, Pages 189-197

  Bhatia, K L ^a   Kishore, Nawal ^a,e   Malik, Jitender ^a   Singh, Mahender ^b   Kundu, R S ^a   Sharma, Ashwani ^c   Srivastav, B K ^d  

^a MAHARSHI DAYANAND UNIVERSITY   (India)

^b Government College   (India)

^c University College   (India)

^d UNIVERSITY OF RAJASTHAN   (India)

^e GURU JAMBHESHWAR UNIVERSITY OF SCIENCE AND TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FERMI LEVEL; LIGHT ABSORPTION; PHONONS; SEMICONDUCTING GERMANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICRO ANALYSIS; FLASH EVAPORATION; OPTICAL ENERGY GAP; OPTICAL INTERBAND TRANSITIONS;

THIN FILMS;

EID: 0036496963     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/3/302     Document Type: Article

References (18)

1. A study of amorphous semiconductors for non-volatile memory devices