Novel material for nonvolatile ovonic unified memory (OUM)-Ag 11in12Te26Sb51 phase change semiconductor

Chinese Physics

Volumn 13, Issue 7, 2004, Pages 1167-1170

  Liu, Bo ^a   Song, Zhi Tan ^a   Zhang, Ting ^a   Feng, Song Lin ^a   Gan, Fu Xi ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

Author keywords

Ag11In12Te26Sb51; Nonvolatile memory; Phase change; Resistance

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC RESISTANCE; MELTING; SEMICONDUCTING FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SPUTTERING; X RAY DIFFRACTION;

AG11IN12TE26SB51; MELTING TEMPERATURE; NONVOLATILE MEMORY; PHASE CHANGE;

SHAPE MEMORY EFFECT;

EID: 22044458549     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/13/7/036     Document Type: Article

References (25)

1. Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
2. Feinleib J, de Neufville J, Moss S C et al 1971 Appl. Phys. Lett. 18 254
3. Ohta T, Nishiuchi K, Narumi K et al 2000 Japan. J. Appl. Phys. 39 770
4. Maeda T, Terao M and Shimano T 2003 Japan. J. Appl. Phys. 42 1044
5. Ovshinsky S R and Czubatyj W 2001 SPIE 4085 15
6. Wicker G 1999 SPIE 3891 2
7. Lai S and Lowrey T 2001 IEEE Oonf. Proc. Int. Electron Devices Meeting 36.5.1
8. Bernacki S, Hunt K, Tyson S et al 2000 IEEE Trans. Nucl. Sci. 47 2528
9. Bunton G V and Quilliam R M 1973 IEEE Trans. Electron Devices 20 140
10. Gosain D P, Nakamura M, Shimizu T et al 1989 Japan. J. Appl. Phys. 28 1013
11. Kang D H, Ahn D H, Kim K B et al 2003 J. Appl. Phys. 94 3536
12. Bhatia K L, Singh M, Katagawa T et al 1995 Semicond. Sci. Technol. 10 65
13. Bhatia K L, Kishore N, Malik J et al 2002 Semicond. Sci. Technol. 17 189
14. Ramesh K, Asokan S, Sangunni K S et al 1999 Appl. Phys. A 69 421
15. Tsendin K D, Lebedev E A, Kim Y H et al 2001 Semicond. Sci. Technol. 16 394
16. Rajesh R and Philip J 2003 Semicond. Sci. Technol. 18 133
17. Nakayama K, Kitagawa T, Ohmura M et al 1993 Japan. J. Appl. Phys. 32 564
18. Nakayama K, Kojima K, Hayakawa F et al 2000 Japan. J. Appl. Phys. 39 6157
19. Nakayama K, Kojima K, Imai Y et al 2003 Japan. J. Appl. Phys. 42 404
20. Saheb P Z, Asokan S and Gowda K A 2003 Appl. Phys. A 76 665
21. Liu B, Ruan H and Gan F X 2003 Chin. Phys. 12 107
22. Jeong T H, Kim M R, Seo H et al 1999 J. Appl. Phys. 86 774
23. Liu B, Ruan H and Gan F X 2003 Opt. Eng. 42 2702
24. Liu B, Ruan H and Gan F X 2002 Chin. Phys. 11 293
25. Shinotsuka M, Onagi N and Harigaya M 2000 Japan. J. Appl. Phys. 39 976