Structure and Electrical Properties of Ge2Sb2Te 5 Thin Film Used for Ovonic Unified Memory

Chinese Physics Letters

Volumn 21, Issue 4, 2004, Pages 741-743

  Zhang, Ting ^a   Liu, Bo ^a   Xia, Ji Lin ^a   Song, Zhi Tang ^a   Feng, Song Lin ^a   Chen, Bomy ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ANTIMONY COMPOUNDS; CRYSTALLINE MATERIALS; ELECTRIC RESISTANCE; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; PHASE CHANGE MEMORY; TELLURIUM COMPOUNDS; X RAY DIFFRACTION;

AMORPHOUS STATE; ANNEALED FILMS; ANNEALING TEMPERATURE EFFECTS; ANNEALING TEMPERATURES; ELECTRICAL RESISTANCES; FCC STRUCTURES; OVONIC UNIFIED MEMORY; STRUCTURE RESISTANCE; THIN-FILMS; X-RAY DIFFRACTION METHOD;

THIN FILMS;

EID: 1942537169     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/4/043     Document Type: Article

References (24)

1. Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
2. Feinleib J, deNeufville J, Moss S C et al 1971 Appl. Phys. Lett. 186 254
3. Ohta T, Nishiuchi K, Narumi K et al 2000 Japan. J. Appl. Phys. 39 770
4. Maeda T, Terao M and Shimano T 2003 Japan. J. Appl. Phys. 42 1044
5. Stanford R 2001 SPIE 4085 15
6. Hwang Y N, Hong J S, Lee S H et al 2003 Symp. VLSI Technology Digest of Technical Papers 173
7. Ha Y H, Yi J H, Horii H et al 2003 Symp. VLSI Technology Digest of Technical Papers 175
8. Horii H, Yi J H, Park J H, et al 2003 Symp. VLSI Technology Digest of Technical Papers 177
9. Bunton G V and Quilliam R M 1973 IEEE Trans. Electron. Devices 20 140
10. Gosain D P, Nakamura M, Shimizu T et al 1989 Japan. J. Appl. Phys. 28 1013
11. Kang D H, Ahn D H, Kim K B et al 2003 J. Appl. Phys. 94 3536
12. Bhatia K L, Singh M, Katagawa T et al 1995 Semicond. Sci. Technol. 10 65
13. Bhatia K L, Kishore N, Malik J et al 2002 Semicond. Sci. Technol. 17 189
14. Ramesh K, Asokan S, Sangunni K S et al 1999 Appl. Phys. A 69 421
15. Tsendin K D, Lebedev E A, Kim Y H et al 20101 Semicond. Sci. Technol. 16 394
16. Rajesh R and Philip J 2003 Semicond. Sci. Technol. 18 133
17. Nakayama K, Kitagawa T, Ohmura M et al 1993 Japan. J. Appl. Phys. 32 564
18. Nakayama K, Kojima K, Hayakawa F et al 2000 Japan. J. Appl. Phys. 39 6157
19. Nakayama K, Kojima K, Imai Y et al 2003 Japan. J. Appl. Phys. 42 404
20. Saheb P Z, Asokan S, and Gowda K A 2003 Appl. Phys. A 76 665
21. Kissinger H E 1957 Anal. Chem. 29 1702
22. Ohshima N 1996 J. Appl. Phys. 79 8357
23. Yamada N, Ohno E, Nishiuchi K et al 1991 J. Appl. Phys. 69 2849
24. Mendoza-Galván A and González-Hernández J 2000 J. Appl. Phys. 87 760