Switching behavior of indium selenide-based phase-change memory cell

IEEE Transactions on Magnetics

Volumn 41, Issue 2, 2005, Pages 1034-1036

  Lee, Heon ^a   Kim, Young Keun ^a   Kim, Donghwan ^a   Kang, Dae Hwan ^b  

^a Korea University   (South Korea)

^b Korea Inst of Sci and Engineering   (South Korea)

Author keywords

Indium selenide (In2Se3); Phase change random access memory (PRAM); Pulsed mode switching; Static mode switching

Indexed keywords

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INDIUM ALLOYS; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; RESISTORS; SWITCHING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM SELENIDE (IN2SE3); PHASE-CHANGE RANDOM ACCESS MEMORY (PRAM); PULSE-MODE SWITCHING; STATIC-MODE SWITCHING;

RANDOM ACCESS STORAGE;

EID: 14544287707     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.842032     Document Type: Article

References (5)

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