Effect of O-implantation on the structure and resistance of Ge 2 Sb 2 Te 5 film

Applied Surface Science

Volumn 242, Issue 1-2, 2005, Pages 62-69

  Liu, Bo ^a   Song, Zhitang ^a   Zhang, Ting ^a   Feng, Songlin ^a   Chen, Bomy ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Ge 2 Sb 2 Te 5; Oxygen implantation; Raman spectra; Sheet resistance; Structure

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DEPOSITION; GRAIN SIZE AND SHAPE; LATTICE CONSTANTS; MAGNETRON SPUTTERING; OXYGEN; PHASE SEPARATION; PHASE TRANSITIONS; RAMAN SCATTERING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GE2SB2TE5; OXYGEN IMPLANTATION; SHEET RESISTANCE; STRUCTURE;

GERMANIUM COMPOUNDS;

EID: 12144271050     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.07.061     Document Type: Article

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