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Volumn 318, Issue 1-2, 1998, Pages 18-21

Ultra thin 3C-SiC pseudomorphic films on Si (100) prepared by organometallic CVD with methyltrichlorosilane

Author keywords

3C SiC; Heteroepitaxial film; Organometallic CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; LOW ENERGY ELECTRON DIFFRACTION; ORGANOMETALLICS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; SURFACE ROUGHNESS;

EID: 0032047218     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01131-0     Document Type: Article
Times cited : (15)

References (11)
  • 6
    • 0346283269 scopus 로고
    • Springer-Verlag, Berlin
    • A. Taylor, R. M. Jones, Silicon Carbide High Temp. Semicond. Proc. Conf., Boston, 1959, (1960) 147, cited in Gmelin Handbook of Inorg. Chem., Springer-Verlag, Berlin (1984) 17.
    • (1984) Gmelin Handbook of Inorg. Chem. , pp. 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.