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Volumn 55, Issue 20, 1997, Pages 13618-13624

Electrical properties of the titanium acceptor in silicon carbide

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EID: 0001146480     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.13618     Document Type: Article
Times cited : (86)

References (25)
  • 1
    • 0000843292 scopus 로고
    • E. O. Johnson, RCA Rev. 26, 163 (1965).
    • (1965) RCA Rev. , vol.26 , pp. 163
  • 10
    • 0001292585 scopus 로고
    • K. Maier, Ph.D. thesis, Universität Freiburg, 1994
    • K. Maier, H. D. Müller and J. Schneider, Mater. Sci. Forum 83-87, 1183 (1992); K. Maier, Ph.D. thesis, Universität Freiburg, 1994.
    • (1992) Mater. Sci. Forum , vol.83-87 , pp. 1183
    • Maier, K.1    Müller, H.2    Schneider, J.3
  • 25
    • 3342989192 scopus 로고
    • K. Graff and H. Pieper, in Semiconductor Silicon 1981, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi (Electrochemical Society, Pennington, NJ, 1981), p. 331.
    • (1981) Semiconductor Silicon 1981 , pp. 331
    • Graff, K.1    Pieper, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.