Chemical vapour deposition of thin-film dielectrics

Russian Chemical Reviews

Volumn 74, Issue 5, 2005, Pages 413-441

  Vasilev, V Yu ^a   Repinsky, S M ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34548128705     PISSN: 0036021X     EISSN: 14684837     Source Type: Journal    
DOI: 10.1070/RC2005v074n05ABEH000886     Document Type: Review

References (142)

1. C F Powell, J H Oxley, J M Blocher Jr. (Eds), in Vapor Deposition (New York: Wiley, 19870)
2. G Hass, R E Tun (Eds) Physics of Thin Films (New York, London: Academic Press, 1967)
3. W Kern, V S Ban, in Thin Film Processes (Eds J L Vossen, W Kern) (New York: Academic Press, 1978) p. 257
4. A C Adams, in VLSI Technology (Ed. S M Sze) (New York: McGrow-Hill, 1988) p. 223
5. S Wolf, R Tauber Silicon Processing for VLSI Era Vol. 1 (Sunset Beach: Lattice Press, 1986)
6. H C Cheng, in ULSI Technology (Eds C Y Chang, S M Sze) (New York: McGrow-Hill, 1996) p. 205
7. L L Vasil'eva, in Sovremennye Problemy Fizicheskoi Khimii Poverkhnosti Poluprovodnikov (Modern Problems of the Physical Chemistry of Semiconductor Surface) (Eds A V Rzhanov, S M Repinsky) (Novosibirsk: Nauka, 1988) p. 152
8. A V Rzhanov (Ed.) Nitrid Kremniya v Elektronike (Silicon Nitride in Electronics) (Novosibirsk: Nauka, 1982)
9. G A Razuvaev, B G Gribov, G A Domrachev, B A Solomatin Metalloorganicheskie Soedineniya v Elektronike (Organometallic Compounds in Electronics) (Moscow: Nauka, 1972)
10. M Volmer Kinetik der Phasenbildung (Leipzig, Drezden: Theodor Steinkopff, 1939)
11. H Schäfer Chemische Transportreaktionen (Weinheim: Verlag Chemie, 1961)
12. F A Kuznetsov, G A Kokovin, Ya M Buzhdan Izv. Sib. Otd. Akad. Nauk, Ser. Khim. Nauk 2 5 (1975)
13. R A Laudise The Growth of Single Crystals (Englewood Cliffs, NJ: Prentice-Hall, 1970);
14. R L Parker Crystal Growth Mechanisms: Energetics, Kinetics and Transport (New York: Academic Press, 1970)
15. V K Leko, O V Mazurin Svoistva Kvartsevogo Stekla (The Properties of Quartz Glass) (Leningrad: Nauka, 1985)
16. R K Iler The Chemistry of Silica Vol. 2 (New York: Wiley-Interscience, 1979)
17. M Nogami, Y Moriya J. Non-Cryst. Solids 37 191 (1980)
18. S S Lin J. Electrochem. Soc. 125 1877 (1978)
19. S M Repinsky, in Sovremennye Problemy Fizicheskoi Khimii Poverkhnosti Poluprovodnikov (Modern Problems of the Physical Chemistry of Semiconductor Surface) (Eds A V Rzhanov, S M Repinsky) (Novosibirsk: Nauka, 1988) p. 90
20. a
21. R L Myulier, in Khimiya Tverdogo Tela (Solid State Chemistry) (Leningrad: Leningrad State University, 1965) p. 9
22. A G Revesz Phys. Status Solidi, A 57 657 (1980)
23. b
24. V F Kiselev Poverkhnostnye Yavleniya v Poluprovodnikakh i Dielektrikakh (Surface Effects in Semiconductors and Dielectrics) (Moscow: Nauka, 1970)
25. H H Dunken, V I Lygin Quantenchemie der Adsorption an Festkörperoberflächen (Leipzig: VEB Deutscher Verlag für Grundstoffinduestrie, 1978)
26. V Yu Vasilev, M S Sukhov Obzorypo Elektronnoi Tekhnike. Ser. 7 (Reviews on Electronic Engineering, Series 7) Vol. 3-4 (Moscow: TsNII Elektronika, 1985)
27. a
28. c
29. V Yu Vassiliev, J Z Zheng, S K Tang, W Lu, J Hua, Y S Lin J. Electrochem. Soc. 146 3039 (1999)
30. c
31. V Yu Vasilev, Doctoral Thesis in Chemical Sciences, Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 2002
32. V Yu Vassiliev J. Electrochem. Soc. 150 F211 (2003)
33. V Yu Vassiliev, J L Sudijono, A Cuthbertson Solid State Technol. 44 129 (2001)
34. c
35. C E Morosanu Thin Solid Films 65 171 (1980)
36. J N Purnell, R Walsh Proc. R. Soc. London, Ser. A 293 543 (1966)
37. G Schulze, M Henzler Surf. Sci. 124 336 (1983)
38. Ch Kleint, B Hartmann, H Z Meyer Z. Phys. Chem. 250 315 (1972)
39. d
40. b
41. S M Repinsky, L V Mironova Izv. Sib. Otd. Akad. Nauk, Ser. Khim. Nauk 2 44 (1915)
42. T N Bell, K A Perkins, P G Perkins J. Chem. Soc., Faraday Trans. 1 77 1779 (1981)
43. e
44. V Yu Vasilev, L L Vasilyeva Izv. Sib. Otd. Akad. Nauk. Ser. Khim. Nauk 14 86 (1983)
45. e
46. R S Rosler Solid State Technol. 20 63 (1977)
47. T A Brown, I J Kamins Solid State Technol. 22 51 (1979)
48. M Praiteur, J Goldman Semicond. Int. 7 250 (1984)
49. V Yu Vasilev, S M Maroshina Elektron. Promst' 10 60 (1986)
50. e
51. V Yu Vasilev, S M Maroshina, in Poluprovodnikovaya Mikroelektronika (Ed. V S Shadrin) (Semiconductor Microelectronics) (Novosibirsk: Izd. NETI, 1989) p. 62
52. S E Morosanu, D Iosif, E Segal Thin Solid Films 92 334 (1982)
53. K F Roenigk, K P Jensen J. Electrochem. Soc. 134 1777 (1987)
54. A A Korkin, J V Cole, D Sengupta, J B Adams J. Electrochem. Soc. 146 4203 (1999)
55. S N Shepelev, V Yu Vasilev, V P Popov Obzorypo Elektronnoi Tekhnike, Ser. 7 (Reviews on Electronic Engineering, Series 7) (Moscow: TsNII Elektronika, 1988) No. 7
56. J W Lee, K D Mackenzie, D Johnson, J N Sasserath, S J Pearton, F J Ren Electrochem. Soc. 147 1481 (2000)
57. T P Smirnova, in Problemy Elektronnogo Materialovedeniya (Problems of Electronic Materials Science) (Ed. F A Kuznetsov) (Novosibirsk: Nauka, 1986) p. 61
58. A K Gaind, E W Hearn J. Electrochem. Soc. 125 139 (1978)
59. P S Shantarovich Acta Phisicochim. USSR 2 633 (1935)
60. C Cobianu, C Pavelescu Thin Solid Films 102 361 (1983)
61. C Pavelescu, C Cobianu, L Condriuc, E Segal Thin Solid Films 114 291 (1984)
62. L L Vasilyeva, V N Drozdov, in Problemy Fizicheskoi Khimii Poverkhnosti Poluprovodnikov (Problems of Physical Chemistry of Semiconductor Surface) (Ed. A V Rzhanov) (Novosibirsk: Nauka, 1978) p. 155
63. b
64. b
65. V V Azatyan Usp. Khim. 54 33 (1985)
66. [Russ. Chem. Rev. 54 21 (1985)]
67. V V Azatyan, V A Kalkanov, A A Shavard React. Kinet. Catal. Lett. 15 367 (1980)
68. b
69. S A Harutunyan, T G Mkryan, E N Sarkisyan Oxid. Commun. 7 49 (1984)
70. V R Brain, L N Krasnoperov. V N Panlilov Oxid. Commun. 6 259 (1984)
71. R Withnall, L Andrews J. Am. Chem. Soc. 107 2567 (1985)
72. T Kudo, S Nagase J. Am. Chem. Soc. 107 2589 (1985)
73. T Kudo, S Nagase J. Phys. Chem. 88 2833 (1984)
74. L C Snyer, K Raghavachari J. Chem. Phys. 80 5076 (1984)
75. N K Serdyuk, V P Strunin, V N Panfilov React. Kinet. Catal. Lett. 29 9 (1985)
76. F Kaufman Prog. React. Kinet. 1 3 (1961)
77. A Sbintani J. Electrochem. Soc. 124 1771 (1977)
78. A Sbintani J. Electrochem. Soc. 127 426 (1980)
79. E Whitby, M Hashino J. Electrochem. Soc. 143 3397 (1996)
80. a
81. L L Vasilyeva, V N Kruchinin, L A Nenasheva, V V Nosov Poverkhnost' 12 54 (1992)
82. M R Baklanov, L L Vasilyeva, F N Dulcev Thin Solid Films 171 43 (1989)
83. b
84. F N Dultsev, L A Nenasheva, L L Vasilyeva J. Electrochem. Soc. 145 2569 (1998)
85. T Takahashi, K Hagiwara, Y Egashira, H Komiyama J. Electrochem. Soc. 143 1365 (1996)
86. T Takahashi, K Hagiwara, H Komiyama, Y Egashira J. Electrochem. Soc. 145 1171 (1998)
87. A A Onishchuk, V N Panfilov Usp. Khim. 70 368 (2001)
88. [Russ. Chem. Rev. 70 321 (2001)]
89. M S Sukhov, T 3 Sbcheglova Poverkhnost' 4 72 (1985)
90. M L Hitchman, J Kane J. Cryst. Growth 55 485 (1981)
91. M L Hitchman, A E Widmer J. Cryst. Growth 55 501 (1981)
92. L L Vasilyeva, L I Rabinovich Izv. Sib. Otd. Akad. Nauk, Ser. Khim. Nauk 9 65 (1981)
93. b
94. V Yu Vasilev, A N Kurchenko, in Poluprovodnikovaya Tenzometriya (Semiconductor Strain Measurement) (Ed. V S Shadrin) (Novosibirsk: Izd. NETI, 1988) p. 11
95. J G Wilkes J. Cryst. Growth 70 271 (1984)
96. M Nisbijima, H Kobayashi, K Edamoto, M Onchi Surf Sci. 137 473 (1984)
97. D-R He, F W Smith Surf. Sci. 154 347 (1985)
98. R S Swann, A E Pyne J. Electrochem. Soc. 116 1014 (1969)
99. W J Kroll, R L Titus, J Wagner J. Electrochem. Soc. 122 573 (1975)
100. C D Dobson, A Kiermasz, K Beekman, R J Bilby Semicond. Int. 17 85 (1994)
101. V Yu Vasilev, in Poluprovodnikovaya Tenzometriya. Fizicheskie i Tekhnologicheskie Problemy (Semiconductor Strain Measurement. Physical and Technological Problems) (Ed. V S Shadrin) (Novosibirsk: Izd. NETI, 1986) p. 70
102. W R Sinclair, J V Maccbesney, P K Gallagher, P B O'Connor Thermochim. Acta 30 225 (1979)
103. D L Wood, J V Maccbesney, J P Luongo J. Mater. Sci. 13 1761 (1978)
104. V Yu Vasilev, Candidate Thesis in Chemical Sciences, Institute of Solid State Chemistry and Mechanochemistry, Siberian Branch, Academy of Sciences of the USSR, Novosibirsk, 1990
105. C Smolinsky, R Dean Mater. Lett. 4 256 (1984)
106. d
107. c
108. A S Adams, S D Capio J. Electrochem. Soc. 126 1042 (1979)
109. F S Becker, D Pawlik, H Anzinger, A Spitzer X Vac. Sci. Technol.. B 5 1555 (1987)
110. K Fujono, Y Nishimoto, N Tokumasu, K Maeda J. Electrochem. Soc. 137 2883 (1990)
111. K Maeda, S M Fisher Solid State Technol. 36 83 (1993)
112. M D Dobkin, S Makhtari, M Schmidt, A Pant, L Robinson J. Electrochem. Soc. 142 2332 (1995)
113. L-Q Xia, S Nemani, M Galiano, S Pichai, S Chandran, E Yieh, D Cote, R Conti, D Restano, D Többen J. Electrochem. Soc. 146 1181 (1999)
114. K Tsukamoto, D Cheng, H Komiyama, Y Nishimoto, N Tokumasu, K Maeda Electrochem. Solid State Lett. 2 24 (1999)
115. K Ikeda, S Nakayama, M Maeda J. Electrochem. Soc. 142 1659 (1995)
116. K Ikeda, S Nakayama, M Maeda J. Electrochem. Soc. 143 1715 (1996)
117. M Yoshimaru, T Yashie J. Electrochem. Soc. 145 2847 (1998)
118. e
119. R N Ghoshtagere J. Electrochem. Soc. 125 110 (1978)
120. K S Yeung, Y W Lam Thin Solid Films 109 169 (1983)
121. T Homma J. Electrochem. Soc. 143 707 (1996)
122. J-G Kim, C-S Park, J S Chun Thin Solid Films 97 97 (1982)
123. SF Nitodas, S V Sotirchos J. Electrochem. Soc. 147 1050 (2000)
124. J R Hollahan, R S Rosier, in Thin Film Processes (Eds J L Vossen, W Kern) (New York: Academic Press, 1978) p. 335
125. A K Adams Solid State Technol. 26 135 (1983)
126. D W Hess J. Vac. Sci. Technol., A 2 244 (1984)
127. D L Tolliver, in VLSI Microelectronics Microstructure Science Vol. 8 (Ed. N G Einspruch) (New York: Academic Press, 1984) p. 2
128. B J Schravendijk, D Cari, F Nagy, W Hoek, in Proceedings of the 1st International Dielectric for ULSI Multilevel Interconnection Conference, Santa Clara, 1995 p. 141
129. M Sato, A Yoshinobu J. Appl. Phys. 256 L764 (1986)
130. R A Levy, K Nassau J. Electrochem. Soc. 132 409 (1985)
131. T G Dukhanova, V Yu Vasilev, Yu I Veretenin Obzorypo Elektronnoi Tekhnike, Ser. 3 (Reviews on Electronic Engineering, Series 3) (Moscow: TsNII Elektronika, 1988) No. 4
132. a
133. S M Fisher, H Chino, K Maeda, Y Nishimoto Solid State Technol. 36 55 (1993)
134. d
135. d
136. f
137. f
138. f
139. V Yu Vassiliev, C Lin, D Fung, J Hsieh, J L Sudijono Electrochem. Solid State Lett. 3 80 (2000)
140. D L Simpson, R T Crosswell, A Reisman, C K Williams, D Tempie J. Electrochem. Soc. 147 1560 (2000)
141. S K Tang, V Yu Vassiliev, S Mridha, L Chan Thin Solid Films 352 77 (1999)
142. M C Hughes, D R Wonsidler J. Electrochem. Soc. 134 1488 (1987)