Characteristics of silicon dioxide films on patterned substrates prepared by atmospheric-pressure chemical vapor deposition using tetraethoxysilane and ozone

Journal of the Electrochemical Society

Volumn 143, Issue 5, 1996, Pages 1715-1718

  Ikeda, Koichi ^a   Nakayama, Satoshi ^a   Maeda, Masahiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OZONE; SILANES; SILICA; SPECTROMETRY; SUBSTRATES;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; FLAT SURFACES; PATTERNED SUBSTRATES; STRETCHING VIBRATION MODE SHIFTS; TETRAETHOXYSILANE; THERMAL DESORPTION SPECTROSCOPY; WAFER TOPOGRAPHY;

SEMICONDUCTING FILMS;

EID: 0030142285     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836706     Document Type: Article

References (10)

1. Y. Nishimoto, N. Tokumasu, T. Fukuyama, and K. Maeda, in Extended Abstracts of the 19th Conference on Solid State Devices and Materials, p. 447 (1987).
2. H. Kotani, M. Matsuura, A. Fujii, H. Genjou, and S. Nagao, IEDM Tech. Dig., 89, 669 (1989).
3. M. Matsuura, H. Kotani, and H. Abe, in Extended Abstracts of the Solid State Devices and Materials, p. 239 (1990).
4. K. Fujino, Y. Nishimoto, T. Tokumasu, and K. Maeda, This Journal, 137, 2883 (1990).
5. A. C. Adams and C. D. Capio, ibid., 126, 1042 (1979).
6. K. Ikeda, S. Nakayama, and M. Maeda, ibid., 142, 1659 (1995).
7. N. Yabumoto, K. Minegishi, K. Saito, M. Morita, and T. Ohmi, in Semiconductor Cleaning Technology, J. Ruzyllo and R. E. Novak, Editors, PV 90-9, p. 265, The Electrochemical Society Proceeding Series, Pennington, NJ (1990).
8. K. Murase, N. Yabumoto, and Y. Komine, This Journal, 140, 1722 (1993).
9. K. Ikeda, S. Nakayama, and M. Maeda, Jpn. J. Appl. Phys., 34, 2182 (1995).
10. A. L. Smith, Spectrochim. Acta, 16, 87 (1960).